Silicon Carbide Schottky Diode

Silicon Carbide Power Schottky diodes from GeneSiC Semiconductor

Image of GeneSiC's Silicon Carbide Schottky DiodeGeneSiC Semiconductor introduces their Silicon Carbide Power Schottky diode. The advantage of these products is improved circuit efficiency (lower overall cost), low switching losses, ease of paralleling devices without thermal runaway, smaller heat sink requirements, low reverse recovery current, low device capacitance, and low reverse leakage current at operating temperature. At 1200 V, customers have a wide range of amperages and package sizes. These products are RoHS compliant.

Features
  • 1200 V Schottky rectifier
  • 175°C maximum operating temperature
  • Temperature independent switching behavior
  • Superior surge current capability
  • Positive temperature coefficient of Vf
  • Extremely fast switching speeds
  • Superior figure of merit Qc/If
Applications
  • Power factor correction (PFC)
  • Switched-mode power supply (SMPS)
  • Solar inverters
  • Wind turbine inverters
  • Motor drives
  • Induction heating
  • Uninterruptible power supply (UPS)
  • High voltage mulipliers

Arrays

ObrazManufacturer Part NumberOpisDostępna ilość Cena
DIODE MOD SIC 1700V 136A SOT-227GB2X50MPS17-227DIODE MOD SIC 1700V 136A SOT-2270 - ImmediateSee Page for PricingWyświetl szczegóły
DIODE ARR SIC 1200V 90A TO247-3GC2X20MPS12-247DIODE ARR SIC 1200V 90A TO247-30 - Immediate$51.35Wyświetl szczegóły
DIODE ARRAY SIC 650V 19A TO247-3GE2X8MPS06DDIODE ARRAY SIC 650V 19A TO247-338 - Immediate$29.32Wyświetl szczegóły

Single

ObrazManufacturer Part NumberOpisDostępna ilość CenaWyświetl szczegóły
DIODE SIL CARB 1200V 2A DO214AAGB02SLT12-214DIODE SIL CARB 1200V 2A DO214AA17588 - Immediate$19.51Wyświetl szczegóły
DIODE SIC 3.3KV 300MA DO214AAGAP3SLT33-214DIODE SIC 3.3KV 300MA DO214AA0 - Immediate$62.55Wyświetl szczegóły
DIODE SIL CARB 3300V 14A TO2637GB05MPS33-263DIODE SIL CARB 3300V 14A TO2637101 - Immediate$131.58Wyświetl szczegóły
Updated: 2019-02-19
Published: 2013-02-05