GeneSiC Semiconductor

SiC Schottky Rectifier

GeneSiC offers the GAP3SLT33-220FP 3300 V SiC Schottky Rectifier

Image of GeneSiC GAP3SLT33-220FP SiC Schottkey RectifierGeneSiC is offering and continuously improving innovative silicon carbide power rectifiers for high voltage rating applications and, with significant advantages. Offering low leakage, high-current capability, lower capacitance, and inherently superior high temperature capability. The GAP3SLT33-220FP SiC Schottky Rectifier is 3300 V at 300 mA continuous current and is offered at a competitive price.

Features
  • Industry-leading lowest leakage current
  • 175°C maximum operating temperature
  • Electrically isolated base-plate
  • Positive temperature coefficient of Vf
  • Fast switching speeds
  • Superior figure of merit Qc/If
Applications
  • Down-hole oil drilling, geothermal instrumentation
  • High-voltage multipliers
  • Military power supplies
  • Industrial power

SiC Schottky Rectifier

ObrazManufacturer Part NumberOpisPrąd - średni wyprostowany (Io)Napięcie - przewodzenia (Vf) (maks.) przy IfDostępna ilość Cena
DIODE SIC 3.3KV 300MA TO220FPGAP3SLT33-220FPDIODE SIC 3.3KV 300MA TO220FP300mA1.7 V @ 300 mA0 - Immediate$27.77Wyświetl szczegóły
Published: 2015-08-28

Related Product Highlight

Silicon Carbide Schottky Diode Silicon Carbide Power Schottky Diode feature superior surge current capability and positive temperature coefficient of Vf.