eGaN FET's Characteristics

eGan® FET's Characteristics

EPC

This tutorial covers the operation of EPC’s enhancement mode gallium nitride transistors.  To explain the eGaN devices’ ease-of-use, it is necessary to first understand how the device operates and highlight both the similarities and differences versus current power MOSFETs.

Related Parts

ObrazManufacturer Part NumberOpisFunkcjaWbudowaneWykorzystywany układ scalony / częśćDostępna ilość CenaWyświetl szczegóły
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015Sterownik półmostka H (zewnętrzny FET)BrakEPC20150 - Immediate$329.40Wyświetl szczegóły
EVAL BOARD FOR EPC2001EPC9017EVAL BOARD FOR EPC2001Sterownik półmostka H (zewnętrzny FET)BrakEPC20010 - Immediate$434.63Wyświetl szczegóły
EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007Sterownik półmostka H (zewnętrzny FET)BrakEPC80070 - Immediate$526.13Wyświetl szczegóły
EVAL BOARD FOR EPC2001EPC9002EVAL BOARD FOR EPC2001Sterownik półmostka H (zewnętrzny FET)BrakEPC20010 - Immediate$329.40Wyświetl szczegóły
PTM Published on: 2010-10-06

Related Articles and Blogs

Power GaN Products and Resources Available at DigiKey GaN is making inroads into power design. This blog provides some background and some relevant GaN products and resources now available at DigiKey.
High-Step-Down-Ratio Buck Converters for Intermediate Bus Architectures Solutions for the design challenges of high-step-down-ratio DC/DC buck converters including Silicon & eGan FETs.

Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Driving eGaN® Power Transistors EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
eGaN® Basics The basics of EPC’s enhancement mode gallium nitride (eGaN) transistors.