650 V Silicon Carbide Schottky Diodes in Compact QFN 8x8 Package

Product Highlights > 650 V Silicon Carbide Schottky Diodes in Compact QFN 8x8 Package

            650 V Silicon Carbide Schottky Diodes in Compact QFN 8x8 Package
                    Wolfspeed’s silicon carbide (SiC) 650 V Schottky diode technology is optimized for high-performance power ‎electronics applications
    

Image of Wolfspeed's 6th Generation SiC Schottky Barrier Diode With the performance advantages of silicon carbide (SiC) Schottky barrier diodes from Wolfspeed, power electronics systems can expect to meet higher efficiency standards than Si-based solutions while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.

Features

Low forward voltage (V_F) drop with positive temperature coefficient
Zero reverse recovery current/forward recovery voltage

Temperature-independent switching behavior
Low-profile package with low inductance

Benefits

Improve system efficiency with lower conduction loss
Enable high switching frequency operation

Improve system level power density
Reduce system size, weight, and cooling requirements

Applications

Enterprise power, server, and telecom power supplies
Switched mode power supplies
Industrial power supplies

Boosted power factor correction
Bootstrap diodes
LLC clamping