Ustawienia
Szybka dostawa
Bezpłatna wysyłka
Incoterms
Typy płatności
Produkt z platformy handlowej
NTBG070N120M3S Silicon Carbide (SiC) MOSFETs
onsemi's NTBG070N120M3S SiC MOSFETs are EliteSiC, 65 mΩ, 1200 V with M3S technology in the D2PAK-7L package
onsemi's NTBG070N120M3S 1200 V M3S SiC MOSFETs are optimized for fast switching applications. They shrug off negative gate voltages and gate spikes thanks to planar technology. The NTBG070N120M3S MOSFETs hit peak performance at 18 V but remain agile at 15 V.
Features
- D2PAK-7L package with Kelvin source configuration
- Excellent FOM [ = RDS(ON) * EOSS ]
- Ultra-low gate charge (Qg(tot) = 57 nC)
- High-speed switching with low capacitance (COSS = 57 pF)
- 15 V to 18 V gate drive
- M3S technology: 65 mΩ RDS(ON) with low Eon and Eoff losses
- 100% avalanche tested
- Halide-free and RoHS compliant
Applications
- Industrial
NTBG070N120M3S Silicon Carbide (SiC) MOSFETs
| Obraz | Manufacturer Part Number | Opis | Typ FET | Technologia | Napięcie dren-źródło (Vdss) | Dostępna ilość | Cena | Wyświetl szczegóły | |
|---|---|---|---|---|---|---|---|---|---|
 |  | NTBG070N120M3S | SILICON CARBIDE (SIC) MOSFET - E | Kanał N | SiCFET (węglik krzemu) | 1200 V | 1 - Immediate | $31.17 | Wyświetl szczegóły |
Published: 2024-03-05
