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650 V and 1,200 V Series Automotive-Grade Silicon Carbide MOSFETs
Goford Semiconductor's GS65xxx and GS120xxx AEC-Q101 SiC MOSFETs are available in a TO-247-4 package
Goford Semiconductor's GS65xxx and GS120xxx auto-grade silicon carbide (SiC) MOSFETs use an innovative technology that provides superior switching performance and a higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure a low capacitance and gate charge. Consequently, system benefits include a very high efficiency, faster operating frequency, an increased power density, a reduced EMI, and reduced system size.
Interleaved PFC Block Diagram
Features
- High-speed switching with low capacitance
- Optimized package with a separate driver source pin:
- Easy to parallel and simple to drive
- High-blocking voltage with low RDS(ON)
- RoHS-compliant and halogen-free
- AEC-Q101-qualified and PPAP-capable
Applications
- EV motor drives, DC/DC converters, and AC/DC converters
- Switch-mode power supplies
- Power factor correction modules
- Solar PV inverters
650 V and 1,200 V Series Automotive-Grade SiC MOSFETs
| Obraz | Manufacturer Part Number | Opis | Dostępna ilość | Cena | Wyświetl szczegóły | |
|---|---|---|---|---|---|---|
 |  | GS65R060Q4A | SiC MOSFET N-CH 650V 42A TO-247 | 5000 - Marketplace | $33.25 | Wyświetl szczegóły |
| | GS120R068Q4A | SiC MOSFET N-CH 1200V 39A TO-24 | 5000 - Marketplace | $44.31 | Wyświetl szczegóły |
| | GS65R030Q4A | SiC MOSFET N-CH 650V 70A TO-247 | 5000 - Marketplace | $54.29 | Wyświetl szczegóły |
| | GS65R045Q4A | SiC MOSFET N-CH 650V 51A TO-247 | 5000 - Marketplace | $55.41 | Wyświetl szczegóły |
| | GS120R033Q4A | SiC MOSFET N-CH 1200V 69A TO-24 | 5000 - Marketplace | $65.39 | Wyświetl szczegóły |
| | GS120R040Q4 | SiC MOSFET N-CH 1200V 50A TO-24 | 5000 - Marketplace | $66.47 | Wyświetl szczegóły |
Updated: 2024-06-14
Published: 2023-11-09
