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48 mm High-Power SiC Module Platform
GE Aerospace's silicon carbide (SiC) power modules deliver very low inductance for aviation, military, and industrial applications
GE Aerospace's GE12047BCA3, GE12047CCA3, GE17042BCA3, and GE17042CCA3 SiC power modules are electrification solutions enabling higher power density, faster switching, and higher reliability.
The 48 mm platform incorporates power overlay wire bond-free technology to minimize the inductance to as low as 2 nH. The RTD sensor is located directly above the SiC die, giving the user accurate and timely control for optimal performance.
Features
- Half-bridge or dual (two-switch) topology
- Voltage levels available: 1,200 V and 1,700 V
- Continuous drain current: up to 475 A (max.)
- Very low inductance: 2 nH (dual) and 6 nH (half-bridge)
- Operating junction temperature (TJmax): +175°C
- High-accuracy RTD temperature sensor
- AlSiC baseplate
- AS9100 Aviation Quality Management System
- Power overlay wire bondless technology
Applications
- Generators
- Traction inverters
- Propulsion inverters
- DC/DC converters
- Power distribution
48 mm High-Power SiC Module Platform
| Obraz | Manufacturer Part Number | Opis | Konfiguracja | Napięcie dren-źródło (Vdss) | Prąd - ciągły drenu (Id) przy 25°C | Dostępna ilość | Cena | Wyświetl szczegóły | |
|---|---|---|---|---|---|---|---|---|---|
 |  | GE12047BCA3 | MOSFET 2N-CH 1200V 475A | 2 kanały N (podwójne) | 1200V (1,2kV) | 475A | 10 - Marketplace | $7,702.27 | Wyświetl szczegóły |
|  | GE12047CCA3 | MOSFET 2N-CH 1200V 475A MODULE | 2 kanały N (półmostek) | 1200V (1,2kV) | 475A | 25 - Marketplace | $7,702.27 | Wyświetl szczegóły |
|  | GE17042BCA3 | MOSFET 2N-CH 1700V 425A MODULE | 2 kanały N (podwójne) | 1700V (1,7kV) | 425A (Tc) | 4 - Marketplace | $9,677.21 | Wyświetl szczegóły |
|  | GE17042CCA3 | MOSFET 2N-CH 1700V 425A MODULE | 2 kanały N (półmostek) | 1700V (1,7kV) | 425A (Tc) | 12 - Marketplace | $9,677.21 | Wyświetl szczegóły |
Published: 2023-05-02
