EPC2111 30 V eGaN® Transistor Half-Bridge

Product Highlights > EPC2111 30 V eGaN® Transistor Half-Bridge

            EPC2111 30 V eGaN® Transistor Half-Bridge
                    EPC's EPC2111 enhancement-mode GaN power transistor half-bridge increases both efficiency and power density
    

EPC’s 30 V eGaN half-bridge, EPC2111, integrates two eGaN power FETs into a single device increasing both efficiency and power density while reducing assembly costs to the end user’s power conversion systems. The EPC2111 comes in a chip-scale package for improved switching speed and thermal performance and is only 3.5 mm x 1.5 mm for increased power density. A primary application for this device is for notebook and tablet computing. The high-frequency capability of GaN reduces the size required for power conversion and thus will drive significant size reductions of next-generation mobile computing.

Features

High-frequency capability

Monolithic integration eliminates interconnect inductances for higher efficiency at a higher frequency

High efficiency

Lower conduction and switching losses, zero reverse recovery losses

Small footprint

Low inductance, extremely small, 3.5 mm x 1.55 mm BGA surface-mount passivated die

Applications

High-frequency DC/DC power conversion
Notebook and tablet computing