Automotive Power MOSFETs in LFPAK33 Package

Nexperia's LFPAK33 devices feature a significantly lower resistance in response to growing industry pressure to reduce the size of modules in the car while continuing to improve energy efficiency and reliability. LFPAK33 MOSFETs enable the power infrastructure that allows next-generation automotive subsystems such as radar and ADAS technology to operate reliably and efficiently.

The Nexperia LFPAK33 package uses a copper clip design to reduce the package resistance and inductance which in turn reduces the R_DS(on) and losses of the MOSFET. The resulting package has an ultra-compact footprint of 10.9 mm², and because no wires or glue is used internally, operating temperatures of up to 175°C T_j  (max) are possible. Devices can handle up to 70 A, and the extensive product portfolio includes devices that range between 30 V to 100 V and an R_DS(on) as low as 6.3 mΩ.