SIR812DP-T1-GE3 Vishay Siliconix | Single FETs, MOSFETs

SIR812DP-T1-GE3 is Obsolete and no longer manufactured.

Available Substitutes:

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Vishay Siliconix

In Stock: 0

Unit Price: 10,70000 zł

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Texas Instruments

In Stock: 5 384

Unit Price: 11,49000 zł

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SIR812DP-T1-GE3
DigiKey Part Number	SIR812DP-T1-GE3TR-ND - Tape & Reel (TR)
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIR812DP-T1-GE3
Description	MOSFET N-CH 30V 60A PPAK SO-8
Customer Reference
Detailed Description	N-Channel 30 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.3V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 335 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR)	Input Capacitance (Ciss) (Max) @ Vds 10240 pF @ 15 V
Part Status Obsolete	Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 30 V	Supplier Device Package PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C 60A (Tc)	Package / Case PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SIR812
Rds On (Max) @ Id, Vgs 1.45mOhm @ 20A, 10V

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Substitutes (2)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
SIRA80DP-T1-RE3	Vishay Siliconix	0	SIRA80DP-T1-RE3CT-ND	10,70000 zł	Similar
CSD17312Q5	Texas Instruments	5 384	296-27613-1-ND	11,49000 zł	Similar

Obsolete

This product is no longer manufactured. View Substitutes

SIR812DP-T1-GE3