Parametric Equivalent
Parametric Equivalent
Parametric Equivalent
Parametric Equivalent
Parametric Equivalent

S2M-M3/52T | |
|---|---|
DigiKey Part Number | S2M-M3/52T-ND - Tape & Reel (TR) |
Manufacturer | |
Manufacturer Product Number | S2M-M3/52T |
Description | DIODE STD 1000V 1.5A DO214AA |
Manufacturer Standard Lead Time | 10 Weeks |
Customer Reference | |
Detailed Description | Diode 1000 V 1.5A Surface Mount DO-214AA (SMB) |
Datasheet | Datasheet |
Category | Reverse Recovery Time (trr) 2 µs |
Mfr | Current - Reverse Leakage @ Vr 1 µA @ 1000 V |
Packaging Tape & Reel (TR) | Capacitance @ Vr, F 16pF @ 4V, 1MHz |
Part Status Active | Mounting Type |
Technology | Package / Case |
Voltage - DC Reverse (Vr) (Max) 1000 V | Supplier Device Package DO-214AA (SMB) |
Current - Average Rectified (Io) 1.5A | Operating Temperature - Junction -55°C ~ 150°C |
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 1.5 A | Base Product Number |
Speed Standard Recovery >500ns, > 200mA (Io) |
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| S2M-E3/52T | Vishay General Semiconductor - Diodes Division | 12 203 | S2M-E3/52TGICT-ND | 1,76000 zł | Parametric Equivalent |
| S2M-E3/5BT | Vishay General Semiconductor - Diodes Division | 68 943 | S2M-E3/5BTGICT-ND | 1,76000 zł | Parametric Equivalent |
| S2M-M3/5BT | Vishay General Semiconductor - Diodes Division | 0 | S2M-M3/5BT-ND | 0,38156 zł | Parametric Equivalent |
| S2MHE3_A/H | Vishay General Semiconductor - Diodes Division | 245 | S2MHE3_A/HGICT-ND | 2,41000 zł | Parametric Equivalent |
| S2MHE3_A/I | Vishay General Semiconductor - Diodes Division | 4 597 | S2MHE3_A/IGICT-ND | 2,41000 zł | Parametric Equivalent |
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 13 500 | 0,38156 zł | 5 151,06 zł |
| Unit Price without VAT: | 0,38156 zł |
|---|---|
| Unit Price with VAT: | 0,46932 zł |






