Name: SQJQ112E-T1_GE3
Brand: Vishay Siliconix
SKU: 742-SQJQ112E-T1_GE3TR-ND
Price: 21.8202 PLN
Availability: InStock

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SQJQ112E-T1_GE3
DigiKey Part Number	742-SQJQ112E-T1_GE3TR-ND - Tape & Reel (TR) 742-SQJQ112E-T1_GE3CT-ND - Cut Tape (CT) 742-SQJQ112E-T1_GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SQJQ112E-T1_GE3
Description	AUTOMOTIVE N-CHANNEL 100 V (D-S)
Manufacturer Standard Lead Time	39 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 296A (Tc) 600W (Tc) Surface Mount PowerPAK® 8 x 8
Datasheet	Datasheet
EDA/CAD Models	SQJQ112E-T1_GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 272 nC @ 10 V
Series TrenchFET® Gen IV	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 15945 pF @ 25 V
Part Status Active	Power Dissipation (Max) 600W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology MOSFET (Metal Oxide)	Grade Automotive
Drain to Source Voltage (Vdss) 100 V	Qualification AEC-Q101
Current - Continuous Drain (Id) @ 25°C 296A (Tc)	Mounting Type Surface Mount
Drive Voltage (Max Rds On, Min Rds On) 10V	Supplier Device Package PowerPAK® 8 x 8
Rds On (Max) @ Id, Vgs 2.53mOhm @ 20A, 10V	Package / Case PowerPAK® 8 x 8