Name: SISS61DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS61DN-T1-GE3TR-ND
Price: 8.0442 PLN
Availability: InStock

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SISS61DN-T1-GE3
DigiKey Part Number	SISS61DN-T1-GE3TR-ND - Tape & Reel (TR) SISS61DN-T1-GE3CT-ND - Cut Tape (CT) SISS61DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISS61DN-T1-GE3
Description	MOSFET P-CH 20V 30.9/111.9A PPAK
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	P-Channel 20 V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
Datasheet	Datasheet
EDA/CAD Models	SISS61DN-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 900mV @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 231 nC @ 10 V
Series TrenchFET® Gen III	Vgs (Max) ±8V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 8740 pF @ 10 V
Part Status Active	Power Dissipation (Max) 5W (Ta), 65.8W (Tc)
FET Type P-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 20 V	Supplier Device Package PowerPAK® 1212-8S
Current - Continuous Drain (Id) @ 25°C 30.9A (Ta), 111.9A (Tc)	Package / Case PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V	Base Product Number SISS61
Rds On (Max) @ Id, Vgs 3.5mOhm @ 15A, 4.5V