Name: SISS5623DN-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SISS5623DN-T1-GE3TR-ND
Price: 11.7465 PLN
Availability: InStock

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SISS5623DN-T1-GE3
DigiKey Part Number	742-SISS5623DN-T1-GE3TR-ND - Tape & Reel (TR) 742-SISS5623DN-T1-GE3CT-ND - Cut Tape (CT) 742-SISS5623DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISS5623DN-T1-GE3
Description	P-CHANNEL 60 V (D-S) MOSFET POWE
Manufacturer Standard Lead Time	55 Weeks
Customer Reference
Detailed Description	P-Channel 60 V 10.5A (Ta), 36.3A (Tc) 4.8W (Ta), 56.8W (Tc) Surface Mount PowerPAK® 1212-8S
Datasheet	Datasheet
EDA/CAD Models	SISS5623DN-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.6V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) ±20V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 1575 pF @ 30 V
FET Type P-Channel	Power Dissipation (Max) 4.8W (Ta), 56.8W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 60 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 10.5A (Ta), 36.3A (Tc)	Supplier Device Package PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case PowerPAK® 1212-8S
Rds On (Max) @ Id, Vgs 24mOhm @ 10A, 10V	Base Product Number SISS5623