SIHG33N65EF-GE3 is out of stock and can be placed on backorder.
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N-Channel 650 V 31.6A (Tc) 313W (Tc) Through Hole TO-247AC
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHG33N65EF-GE3

DigiKey Part Number
SIHG33N65EF-GE3-ND
Manufacturer
Manufacturer Product Number
SIHG33N65EF-GE3
Description
MOSFET N-CH 650V 31.6A TO247AC
Manufacturer Standard Lead Time
28 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 31.6A (Tc) 313W (Tc) Through Hole TO-247AC
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
171 nC @ 10 V
Packaging
Tube
Vgs (Max)
±30V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
4026 pF @ 100 V
FET Type
Power Dissipation (Max)
313W (Tc)
Technology
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-247AC
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
109mOhm @ 16.5A, 10V
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (8)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
FCH099N60Eonsemi0FCH099N60E-ND0,00000 złSimilar
FCH104N60Fonsemi450FCH104N60F-ND175,75000 złSimilar
IPW60R099CPAFKSA1Infineon Technologies310IPW60R099CPAFKSA1-ND194,23000 złSimilar
IXFR64N60Q3IXYS30IXFR64N60Q3-ND984,60000 złSimilar
IXTH34N65X2IXYS203IXTH34N65X2-ND212,71000 złSimilar
In-Stock: 0
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All prices are in PLN
Tube
QuantityUnit PriceExt Price
131,06000 zł31,06 zł
2518,50560 zł462,64 zł
10015,51410 zł1 551,41 zł
50013,12164 zł6 560,82 zł
1 00012,48252 zł12 482,52 zł
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:31,06000 zł
Unit Price with VAT:38,20380 zł