Name: SIHG039N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHG039N60EF-GE3-ND
Price: 59.532 PLN
Availability: InStock

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SIHG039N60EF-GE3
DigiKey Part Number	SIHG039N60EF-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHG039N60EF-GE3
Description	MOSFET N-CH 600V 61A TO247AC
Manufacturer Standard Lead Time	28 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 61A (Tc) 357W (Tc) Through Hole TO-247AC
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 126 nC @ 10 V
Series EF	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 4323 pF @ 100 V
Part Status Active	Power Dissipation (Max) 357W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 600 V	Supplier Device Package TO-247AC
Current - Continuous Drain (Id) @ 25°C 61A (Tc)	Package / Case TO-247-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number SIHG039
Rds On (Max) @ Id, Vgs 40mOhm @ 32A, 10V

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Substitutes (3)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
TSM60NE048PW C0G	Taiwan Semiconductor Corporation	300	1801-TSM60NE048PWC0G-ND	55,77000 zł	Similar
TSM60NE069PW C0G	Taiwan Semiconductor Corporation	295	1801-TSM60NE069PWC0G-ND	44,02000 zł	Similar
TSM60NE084PW C0G	Taiwan Semiconductor Corporation	265	1801-TSM60NE084PWC0G-ND	38,82000 zł	Similar

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Unit Price without VAT:	48,40000 zł
Unit Price with VAT:	59,53200 zł

SIHG039N60EF-GE3