Name: SIHD2N80E-GE3
Brand: Vishay Siliconix
SKU: SIHD2N80E-GE3-ND
Price: 9.2742 PLN
Availability: OutOfStock

SIHD2N80E-GE3 is out of stock and can be placed on backorder.

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Infineon Technologies

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Unit Price: 6,25000 zł

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STMicroelectronics

In Stock: 1 321

Unit Price: 8,04000 zł

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SIHD2N80E-GE3
DigiKey Part Number	SIHD2N80E-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHD2N80E-GE3
Description	MOSFET N-CH 800V 2.8A DPAK
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 2.8A (Tc) 62.5W (Tc) Surface Mount TO-252AA
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 19.6 nC @ 10 V
Series E	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 100 V
Part Status Active	Power Dissipation (Max) 62.5W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 800 V	Supplier Device Package TO-252AA
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)	Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number SIHD2
Rds On (Max) @ Id, Vgs 2.75Ohm @ 1A, 10V

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Substitutes (2)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
SPD02N80C3ATMA1	Infineon Technologies	6 965	SPD02N80C3ATMA1CT-ND	6,25000 zł	Similar
STD2N62K3	STMicroelectronics	1 321	497-STD2N62K3CT-ND	8,04000 zł	Similar

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Unit Price without VAT:	7,54000 zł
Unit Price with VAT:	9,27420 zł

SIHD2N80E-GE3