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SIHB22N65E-GE3 is available for purchase but is not normally stocked.
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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIHB22N65E-GE3 | |
|---|---|
DigiKey Part Number | SIHB22N65E-GE3-ND |
Manufacturer | |
Manufacturer Product Number | SIHB22N65E-GE3 |
Description | MOSFET N-CH 650V 22A D2PAK |
Manufacturer Standard Lead Time | 24 Weeks |
Customer Reference | |
Detailed Description | N-Channel 650 V 22A (Tc) 227W (Tc) Surface Mount TO-263 (D2PAK) |
Datasheet | Datasheet |
EDA/CAD Models | SIHB22N65E-GE3 Models |
Product Attributes
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Category | Vgs(th) (Max) @ Id 4V @ 250µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V |
Packaging Tube | Vgs (Max) ±30V |
Part Status Active | Input Capacitance (Ciss) (Max) @ Vds 2415 pF @ 100 V |
FET Type | Power Dissipation (Max) 227W (Tc) |
Technology | Operating Temperature -55°C ~ 150°C (TJ) |
Drain to Source Voltage (Vdss) 650 V | Mounting Type Surface Mount |
Current - Continuous Drain (Id) @ 25°C | Supplier Device Package TO-263 (D2PAK) |
Drive Voltage (Max Rds On, Min Rds On) 10V | Package / Case |
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V | Base Product Number |
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Substitutes (12)
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| FCB20N60FTM | onsemi | 1 795 | FCB20N60FTMCT-ND | 25,21000 zł | Direct |
| FCB199N65S3 | onsemi | 578 | 488-FCB199N65S3CT-ND | 18,53000 zł | Similar |
| IPB60R160C6ATMA1 | Infineon Technologies | 1 095 | IPB60R160C6ATMA1CT-ND | 15,22000 zł | Similar |
| IPB60R190C6ATMA1 | Infineon Technologies | 10 460 | IPB60R190C6ATMA1CT-ND | 14,22000 zł | Similar |
| IXFA22N65X2 | IXYS | 4 207 | 238-IXFA22N65X2-ND | 28,08000 zł | Similar |
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Check Lead Time
This product is not kept in stock at DigiKey. The lead time shown will apply to the manufacturer’s shipment to DigiKey. Upon receiving the product, DigiKey will ship to fill open orders.
Quantity
All prices are in PLN
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 000 | 7,76511 zł | 7 765,11 zł |
| Unit Price without VAT: | 7,76511 zł |
|---|---|
| Unit Price with VAT: | 9,55109 zł |
