TO-263-3
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TO-263-3
TO-263-3

SIHB11N80AE-GE3

DigiKey Part Number
742-SIHB11N80AE-GE3-ND
Manufacturer
Manufacturer Product Number
SIHB11N80AE-GE3
Description
MOSFET N-CH 800V 8A D2PAK
Manufacturer Standard Lead Time
25 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 8A (Tc) 78W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
EDA/CAD Models
SIHB11N80AE-GE3 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
804 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
Base Product Number
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In-Stock: 924
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All prices are in PLN
Tube
QuantityUnit PriceExt Price
110,69000 zł10,69 zł
106,91400 zł69,14 zł
1004,76970 zł476,97 zł
5003,85302 zł1 926,51 zł
1 0003,55854 zł3 558,54 zł
2 0003,31095 zł6 621,90 zł
5 0003,22538 zł16 126,90 zł
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:10,69000 zł
Unit Price with VAT:13,14870 zł