N-Channel 900 V 1.9A (Tc) 35W (Tc) Through Hole TO-220-3
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IRFIBF30GPBF

DigiKey Part Number
742-IRFIBF30GPBF-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
IRFIBF30GPBF
Description
MOSFET N-CH 900V 1.9A TO220-3
Manufacturer Standard Lead Time
64 Weeks
Customer Reference
Detailed Description
N-Channel 900 V 1.9A (Tc) 35W (Tc) Through Hole TO-220-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.7Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
IRFIBF30
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In-Stock: 900
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Quantity
All prices are in PLN
Tube
QuantityUnit PriceExt Price
116,80000 zł16,80 zł
508,65160 zł432,58 zł
1007,86390 zł786,39 zł
5006,48470 zł3 242,35 zł
1 0006,04178 zł6 041,78 zł
2 0005,96115 zł11 922,30 zł
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:16,80000 zł
Unit Price with VAT:20,66400 zł