Name: TW083Z65C,S1F
Brand: Toshiba Semiconductor and Storage
SKU: 264-TW083Z65C,S1F-ND
Price: 75.0423 PLN
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TW083Z65C,S1F
DigiKey Part Number	264-TW083Z65C,S1F-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TW083Z65C,S1F
Description	G3 650V SIC-MOSFET TO-247-4L 83
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 30A (Tc) 111W (Tc) Through Hole TO-247-4L(X)
Datasheet	Datasheet

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5V @ 600µA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 28 nC @ 18 V
Packaging Tube	Vgs (Max) +25V, -10V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 873 pF @ 400 V
FET Type N-Channel	Power Dissipation (Max) 111W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature 175°C
Drain to Source Voltage (Vdss) 650 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 30A (Tc)	Supplier Device Package TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On) 18V	Package / Case TO-247-4
Rds On (Max) @ Id, Vgs 118mOhm @ 15A, 18V

Report Product Information Error

Documents & Media

Environmental & Export Classifications

Additional Resources

In-Stock: 28

Check for Additional Incoming Stock

Quantity

All prices are in PLN

Tube

Manufacturers Standard Package

Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.

Unit Price without VAT:	61,01000 zł
Unit Price with VAT:	75,04230 zł

TW083Z65C,S1F