Name: TRS40H120H,S1Q
Brand: Toshiba Semiconductor and Storage
SKU: 264-TRS40H120HS1Q-ND
Price: 91.3767 PLN
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TRS40H120H,S1Q
DigiKey Part Number	264-TRS40H120HS1Q-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TRS40H120H,S1Q
Description	1200 V/40 A SIC SCHOTTKY BARRIER
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	Diode 1200 V 102A Through Hole TO-247-2L
Datasheet	Datasheet

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Diodes Rectifiers Single Diodes	Speed Zero Recovery Time > 500mA (Io)
Mfr Toshiba Semiconductor and Storage	Reverse Recovery Time (trr) 0 ns
Packaging Tube	Current - Reverse Leakage @ Vr 230 µA @ 1.2 kV
Part Status Active	Capacitance @ Vr, F 4368pF @ 1V, 1MHz
Technology SiC (Silicon Carbide) Schottky	Mounting Type Through Hole
Voltage - DC Reverse (Vr) (Max) 1200 V	Package / Case TO-247-2
Current - Average Rectified (Io) 102A	Supplier Device Package TO-247-2L
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 40 A	Operating Temperature - Junction 175°C