TRS6E65C,S1Q
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TRS10E65H,S1Q

DigiKey Part Number
264-TRS10E65H,S1Q-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TRS10E65H,S1Q
Description
DIODE SIL CARB 650V 10A TO220L
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
Diode 650 V 10A Through Hole TO-220-2L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
100 µA @ 650 V
Capacitance @ Vr, F
649pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C
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In-Stock: 100
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Quantity
All prices are in PLN
Tube
QuantityUnit PriceExt Price
115,59000 zł15,59 zł
508,19840 zł409,92 zł
1007,80750 zł780,75 zł
5006,44482 zł3 222,41 zł
1 0006,13508 zł6 135,08 zł
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:15,59000 zł
Unit Price with VAT:19,17570 zł