Name: TPW4R50ANH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPW4R50ANHL1QTR-ND
Price: 15.7071 PLN
Availability: InStock

cms-photo-disclaimer

TPW4R50ANH,L1Q
cms-digikey-product-number	TPW4R50ANHL1QTR-ND - Tape & Reel (TR) TPW4R50ANHL1QCT-ND - Cut Tape (CT) TPW4R50ANHL1QDKR-ND - Digi-Reel®
cms-manufacturer	Toshiba Semiconductor and Storage
cms-manufacturer-product-number	TPW4R50ANH,L1Q
cms-description	MOSFET N-CH 100V 92A 8DSOP
cms-standard-lead-time	16 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 100 V 92A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance
Datasheet	Datasheet
cms-eda-cad-models	TPW4R50ANH,L1Q Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	92A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 46A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5200 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	800mW (Ta), 142W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerVDFN
Base Product Number	TPW4R50