Name: TPH2R506PL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH2R506PLL1QTR-ND
Price: 9.7662 PLN
Availability: InStock

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TPH2R506PL,L1Q
cms-digikey-product-number	TPH2R506PLL1QTR-ND - Tape & Reel (TR) TPH2R506PLL1QCT-ND - Cut Tape (CT) TPH2R506PLL1QDKR-ND - Digi-Reel®
cms-manufacturer	Toshiba Semiconductor and Storage
cms-manufacturer-product-number	TPH2R506PL,L1Q
cms-description	MOSFET N-CH 60V 100A 8SOP
cms-standard-lead-time	16 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 60 V 100A (Tc) 132W (Tc) Surface Mount 8-SOP Advance (5x5)
Datasheet	Datasheet
cms-eda-cad-models	TPH2R506PL,L1Q Models

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.4mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id	2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5435 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	132W (Tc)
Operating Temperature	175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN
Base Product Number	TPH2R506

Unit Price without VAT:	7,94000 zł
Unit Price with VAT:	9,76620 zł

TPH2R506PL,L1Q