Name: TPH2R306NH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH2R306NHL1QTR-ND
Price: 11.8326 PLN
Availability: InStock

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TPH2R306NH,L1Q
DigiKey Part Number	TPH2R306NHL1QTR-ND - Tape & Reel (TR) TPH2R306NHL1QCT-ND - Cut Tape (CT) TPH2R306NHL1QDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPH2R306NH,L1Q
Description	MOSFET N-CH 60V 60A 8SOP
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5)
Datasheet	Datasheet
EDA/CAD Models	TPH2R306NH,L1Q Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 1mA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Series U-MOSVIII-H	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 30 V
Part Status Active	Power Dissipation (Max) 1.6W (Ta), 78W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 60 V	Supplier Device Package 8-SOP Advance (5x5)
Current - Continuous Drain (Id) @ 25°C 60A (Tc)	Package / Case 8-PowerVDFN
Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V	Base Product Number TPH2R306
Rds On (Max) @ Id, Vgs 2.3mOhm @ 30A, 10V