Name: TK6R9P08QM,RQ
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK6R9P08QMRQTR-ND
Price: 8.8683 PLN
Availability: InStock

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TK6R9P08QM,RQ
cms-digikey-product-number	264-TK6R9P08QMRQTR-ND - Tape & Reel (TR) 264-TK6R9P08QMRQCT-ND - Cut Tape (CT) 264-TK6R9P08QMRQDKR-ND - Digi-Reel®
cms-manufacturer	Toshiba Semiconductor and Storage
cms-manufacturer-product-number	TK6R9P08QM,RQ
cms-description	UMOS10 DPAK 80V 6.9MOHM
cms-standard-lead-time	16 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 80 V 62A (Tc) 89W (Tc) Surface Mount DPAK
Datasheet	Datasheet
cms-eda-cad-models	TK6R9P08QM,RQ Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSX-H
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	6.9mOhm @ 31A, 10V
Vgs(th) (Max) @ Id	3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	175°C
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63