Name: TK6R8A08QM,S4X
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK6R8A08QMS4X-ND
Price: 9.1881 PLN
Availability: InStock

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TK6R8A08QM,S4X
cms-digikey-product-number	264-TK6R8A08QMS4X-ND
cms-manufacturer	Toshiba Semiconductor and Storage
cms-manufacturer-product-number	TK6R8A08QM,S4X
cms-description	UMOS10 TO-220SIS 80V 6.8MOHM
cms-standard-lead-time	16 Weeks
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cms-detailed-description	N-Channel 80 V 58A (Tc) 41W (Tc) Through Hole TO-220SIS
cms-datasheet	cms-datasheet
cms-eda-cad-models	TK6R8A08QM,S4X Models

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cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSX-H
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	6.8mOhm @ 29A, 10V
Vgs(th) (Max) @ Id	3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	41W (Tc)
Operating Temperature	175°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack

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In-Stock: 14

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Tube