Name: TK2R4E08QM,S1X
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK2R4E08QMS1X-ND
Price: 10.81342 PLN
Availability: OutOfStock

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TK2R4E08QM,S1X
cms-digikey-product-number	264-TK2R4E08QMS1X-ND
cms-manufacturer	Toshiba Semiconductor and Storage
cms-manufacturer-product-number	TK2R4E08QM,S1X
cms-description	UMOS10 TO-220AB 80V 2.4MOHM
cms-standard-lead-time	16 Weeks
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cms-detailed-description	N-Channel 80 V 120A (Tc) 300W (Tc) Through Hole TO-220
cms-datasheet	cms-datasheet
cms-eda-cad-models	TK2R4E08QM,S1X Models

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cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSX-H
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.44mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.5V @ 2.2mA
Gate Charge (Qg) (Max) @ Vgs	178 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13000 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	175°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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Available To Order

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This product is not kept in stock at DigiKey. The lead time shown will apply to the manufacturer’s shipment to DigiKey. Upon receiving the product, DigiKey will ship to fill open orders.

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Tube