RN1965(TE85L,F) Toshiba Semiconductor and Storage | Bipolar Transistor Arrays, Pre-Biased

RN1965(TE85L,F) is Obsolete and no longer manufactured.

Available Substitutes:

Direct

Diodes Incorporated

In Stock: 6 038

Unit Price: 1,36000 zł

Similar

onsemi

In Stock: 20 233

Unit Price: 0,86000 zł

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RN1965(TE85L,F)
DigiKey Part Number	RN1965(TE85LF)TR-ND - Tape & Reel (TR)
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	RN1965(TE85L,F)
Description	TRANS PREBIAS 2NPN 50V 100MA US6
Customer Reference
Detailed Description	Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
EDA/CAD Models	RN1965(TE85L,F) Models

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Category Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased	DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Manufacturer Toshiba Semiconductor and Storage	Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Packaging Tape & Reel (TR)	Current - Collector Cutoff (Max) 100nA (ICBO)
Part Status Obsolete	Frequency - Transition 250MHz
Transistor Type 2 NPN - Pre-Biased (Dual)	Power - Max 200mW
Current - Collector (Ic) (Max) 100mA	Mounting Type Surface Mount
Voltage - Collector Emitter Breakdown (Max) 50V	Package / Case 6-TSSOP, SC-88, SOT-363
Resistor - Base (R1) 2.2kOhms	Supplier Device Package US6
Resistor - Emitter Base (R2) 47kOhms	Base Product Number RN1965

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Substitutes (2)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
DDC123JU-7-F	Diodes Incorporated	6 038	DDC123JU-FDICT-ND	1,36000 zł	Direct
MUN5235DW1T1G	onsemi	20 233	MUN5235DW1T1GOSCT-ND	0,86000 zł	Similar

Obsolete

This product is no longer manufactured. View Substitutes

RN1965(TE85L,F)