N-Channel 1200 V 63A (Tc) 322W (Tc) Through Hole TO-247-3
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GP2T040A120U

DigiKey Part Number
1560-GP2T040A120U-ND
Manufacturer
SemiQ
Manufacturer Product Number
GP2T040A120U
Description
SIC MOSFET 1200V 40M TO-247-3L
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 63A (Tc) 322W (Tc) Through Hole TO-247-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
SemiQ
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
118 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3192 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
322W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
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Quantity
All prices are in PLN
Tube
QuantityUnit PriceExt Price
143,09000 zł43,09 zł
3025,75200 zł772,56 zł
12021,94667 zł2 633,60 zł
51019,21078 zł9 797,50 zł
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:43,09000 zł
Unit Price with VAT:53,00070 zł
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