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IRFD313

DigiKey Part Number
2156-IRFD313-ND
Manufacturer
Harris Corporation
Manufacturer Product Number
IRFD313
Description
N-CHANNEL POWER MOSFET
Customer Reference
Detailed Description
N-Channel 350 V 300mA (Tc) 1W (Tc) Through Hole 4-DIP, Hexdip
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Bulk
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
350 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
135 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
4-DIP, Hexdip
Package / Case
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In-Stock: 900
Non-Cancelable/Non-Returnable
MARKETPLACE PRODUCT
Will ship in approximately 10 days from Rochester Electronics LLC
A separate 333,82 zł flat rate shipping fee will apply
In an effort to support the research and development needs of all customers, we have implemented a maximum purchase limit for this product.
The limit may be purchased every 30 days and any amount over these limits will result in backorder or cancellation of this product.
MAXIMUM PURCHASE LIMIT
Bulk:900
All prices are in PLN
Bulk
QuantityUnit PriceExt Price
2224,95234 zł1 099,42 zł
Unit Price without VAT:4,95234 zł
Unit Price with VAT:6,09138 zł