Name: IXSJ43N120R1K
Brand: IXYS
SKU: 238-IXSJ43N120R1K-ND
Price: 82.8159 PLN
Availability: InStock

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IXSJ43N120R1K
DigiKey Part Number	238-IXSJ43N120R1K-ND
Manufacturer	IXYS
Manufacturer Product Number	IXSJ43N120R1K
Description	1200V 36M (43A @ 25C) SIC MOSFET
Manufacturer Standard Lead Time	32 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 46A (Tc) 143.7W (Tc) Through Hole ISO247-4L
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4.8V @ 11.1mA
Mfr IXYS	Gate Charge (Qg) (Max) @ Vgs 79 nC @ 18 V
Packaging Tube	Vgs (Max) +21V, -4V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 2343 pF @ 800 V
FET Type N-Channel	Power Dissipation (Max) 143.7W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -40°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 46A (Tc)	Supplier Device Package ISO247-4L
Drive Voltage (Max Rds On, Min Rds On) 18V	Package / Case TO-247-4
Rds On (Max) @ Id, Vgs 47mOhm @ 20A, 18V

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Tube

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Unit Price without VAT:	67,33000 zł
Unit Price with VAT:	82,81590 zł

IXSJ43N120R1K