PG-TO247-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
PG-TO247-3
PG-TO247-3

IMW120R040M1HXKSA1

DigiKey Part Number
448-IMW120R040M1HXKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IMW120R040M1HXKSA1
Description
SIC DISCRETE
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 55A (Tc) 227W (Tc) Through Hole PG-TO247-3
Datasheet
 Datasheet
EDA/CAD Models
IMW120R040M1HXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
CoolSiC™
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
54.4mOhm @ 19.3A, 18V
Vgs(th) (Max) @ Id
5.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 18 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1620 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
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In-Stock: 442
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Quantity
All prices are in PLN
Tube
QuantityUnit PriceExt Price
144,62000 zł44,62 zł
3026,92167 zł807,65 zł
12023,04150 zł2 764,98 zł
51022,71073 zł11 582,47 zł
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:44,62000 zł
Unit Price with VAT:54,88260 zł