Name: ISG0616N10NM5HSCATMA1
Brand: Infineon Technologies
SKU: 448-ISG0616N10NM5HSCATMA1TR-ND
Price: 26.4573 PLN
Availability: OutOfStock

Mosfet Array 100V 19A (Ta), 139A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-WHITFN-10-1

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

ISG0616N10NM5HSCATMA1
DigiKey Part Number	448-ISG0616N10NM5HSCATMA1TR-ND - Tape & Reel (TR) 448-ISG0616N10NM5HSCATMA1CT-ND - Cut Tape (CT) 448-ISG0616N10NM5HSCATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	ISG0616N10NM5HSCATMA1
Description	MOSFET 2N-CH 100V 19A 10WHITFN
Manufacturer Standard Lead Time	48 Weeks
Customer Reference
Detailed Description	Mosfet Array 100V 19A (Ta), 139A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-WHITFN-10-1
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays
Manufacturer	Infineon Technologies
Series	OptiMOS™ 5
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Half Bridge)
FET Feature	-
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs	4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.8V @ 85µA
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4800pF @ 50V
Power - Max	3W (Ta), 167W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Package / Case	10-PowerWDFN
Supplier Device Package	PG-WHITFN-10-1