N-Channel 750 V 89A (Tj) 319W (Tc) Through Hole PG-TO247-4
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IMZA75R016M1HXKSA1

DigiKey Part Number
448-IMZA75R016M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZA75R016M1HXKSA1
Description
SILICON CARBIDE MOSFET
Customer Reference
Detailed Description
N-Channel 750 V 89A (Tj) 319W (Tc) Through Hole PG-TO247-4
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
5.6V @ 14.9mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
81 nC @ 18 V
Series
Vgs (Max)
+23V, -5V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
2869 pF @ 500 V
Part Status
Not For New Designs
Power Dissipation (Max)
319W (Tc)
FET Type
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
750 V
Supplier Device Package
PG-TO247-4
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Base Product Number
Rds On (Max) @ Id, Vgs
15mOhm @ 41.5A, 20V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 39
Check for Additional Incoming Stock
Not recommended for new design, minimums may apply
All prices are in PLN
Tube
QuantityUnit PriceExt Price
177,45000 zł77,45 zł
3048,69133 zł1 460,74 zł
12042,40317 zł5 088,38 zł
51040,97327 zł20 896,37 zł
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:77,45000 zł
Unit Price with VAT:95,26350 zł