Name: IMBG120R090M1HXTMA1
Brand: Infineon Technologies
SKU: 448-IMBG120R090M1HXTMA1TR-ND
Price: 36.8262 PLN
Availability: InStock

Need Help?

Feedback

About DigiKey Marketplace Sell on DigiKey.com Careers Site Map Digital Solutions Newsroom

Help and Support Order Status Shipping Rates/Options Returns and Order Issues

Chat (+48) 22 53 64 114 poland.support@digikey.com Co-Browse

IMBG120R090M1HXTMA1
DigiKey Part Number	448-IMBG120R090M1HXTMA1TR-ND - Tape & Reel (TR) 448-IMBG120R090M1HXTMA1CT-ND - Cut Tape (CT) 448-IMBG120R090M1HXTMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMBG120R090M1HXTMA1
Description	SICFET N-CH 1200V 26A TO263
Manufacturer Standard Lead Time	26 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 26A (Tc) 136W (Tc) Surface Mount PG-TO263-7-12
Datasheet	Datasheet
EDA/CAD Models	IMBG120R090M1HXTMA1 Models

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Rds On (Max) @ Id, Vgs	125mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id	5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 18 V
Vgs (Max)	+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds	763 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-12
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number	IMBG120

Unit Price without VAT:	29,94000 zł
Unit Price with VAT:	36,82620 zł

IMBG120R090M1HXTMA1