Diode 650 V 10A Through Hole PG-TO247-3
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Diode 650 V 10A Through Hole PG-TO247-3
PG-TO247-3

IDW20G65C5BXKSA2

DigiKey Part Number
448-IDW20G65C5BXKSA2-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IDW20G65C5BXKSA2
Description
DIODE SIL CARB 650V 10A PGTO2473
Manufacturer Standard Lead Time
61 Weeks
Customer Reference
Detailed Description
Diode 650 V 10A Through Hole PG-TO247-3
Datasheet
 Datasheet
EDA/CAD Models
IDW20G65C5BXKSA2 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
CoolSiC™+
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
180 µA @ 650 V
Capacitance @ Vr, F
300pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
IDW20G65
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In-Stock: 53
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Quantity
All prices are in PLN
Tube
QuantityUnit PriceExt Price
130,95000 zł30,95 zł
3017,95767 zł538,73 zł
12015,10617 zł1 812,74 zł
51013,01714 zł6 638,74 zł
1 02012,26392 zł12 509,20 zł
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:30,95000 zł
Unit Price with VAT:38,06850 zł