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DualCool NexFET CSD16 Q5C MOSFETs
Power MOSFETs from Texas Instruments for applications in networking, telecom, and computing systems
Texas Instruments' DualCool NexFET family of power MOSFETs delivers an industry standard footprint, while enabling thermally efficient cooling through the top and bottom of the package. This package allows power system designers to effectively direct heat away from the PCB in high-current DC/DC applications, resulting in improved power density, higher current capability, and improved system reliability. This series is capable of up to 80% more power dissipation, which allows up to 50% more current through the MOSFETs. Topside cooling is enabled by reducing thermal resistance by a factor of ten over conventional packages.
Diagram
Features
- Reduced thermal resistance to top of package (10-15°C/W to 1.2°C/W)
- Efficient dual-sided heatsinking
- >35 A synchronous buck converter MOSFETs in single phase, single MOSFET for both the high and low side switch
- Up to 80% of heat pulled into heatsink, away from PCB (assumes Rth(pcb-a) 40°C/W and Rth(t-a) 10°C/W)
- Industry standard SON 5 mm x 6 mm footprint
Benefits
- Up to 50% higher current capability
- Up to 80% higher power dissipation capability
- Footprint reduced by up to one half
- Increased power density
- Improved thermal management of system
- Improved $/W
Specifications
- Manufacturer Part Number: CSD16407Q5C
- VDS: 25 V
- VGS: 16 V
- R @ 10 V: 1.8 mΩ
- R @ 4.5 V: 2.5 mΩ
- Qg: 13.3 nC
- Qgd: 3.5 nC
- Manufacturer Part Number: CSD16408Q5C
- VDS: 25 V
- VGS: 16 V
- R @ 10 V: 3.6 mΩ
- R @ 4.5 V: 5.4 mΩ
- Qg: 6.7 nC
- Qgd: 1.9 nC
- Manufacturer Part Number: CSD16321Q5C
- VDS: 25 V
- VGS: 10 V
- R @ 10 V: —
- R @ 4.5 V: 2.1 mΩ
- Qg: 14 nC
- Qgd: 2.5 nC
- Manufacturer Part Number: CSD16322Q5C
- VDS: 25 V
- VGS: 10 V
- R @ 10 V: —
- R @ 4.5 V: 4.6 mΩ
- Qg: 6.8 nC
- Qgd: 1.3 n
- Manufacturer Part Number: CSD16325Q5C
- VDS: 25 V
- VGS: 10 V
- R @ 10 V: —
- R @ 4.5 V: 1.7 mΩ
- Qg: 18 nC
- Qgd: 3.5 nC
Published: 2010-06-09
Poland