600 V MDmesh™ DM2 MOSFETS

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Product Highlights > 600 V MDmesh™ DM2 MOSFETS

            600 V MDmesh™ DM2 MOSFETS
                    STMicroelectronics offers its 600 V MDmesh DM2 MOSFETs for industrial applications
    

Image of STMicroelectronics' 600 V MDmesh DM2 MOSFETS STMicroelectronics' latest high-efficiency fast recovery diode MOSFET series featuring very low recovery charge (Q_rr) and recovery time (t_rr) is optimized for high-voltage full-bridge and half-bridge topologies requiring high switching performance. These 600 V devices also feature ultra-low Qg, extremely low Coss / Ciss, very low on-state resistance, and high dv/dt ruggedness.

Key Features
Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance Very low recovery charge (Q_rr) and recovery time (t_rr)		100% avalanche tested Extremely high dv/dt ruggedness Zener-protected