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SICW028N120A4-BP 1,200 V SiC MOSFET
MCC's advanced MOSFET elevates efficiency and features a low on-resistance in a TO-247-4 package with a Kelvin source pin
MCC's SICW028N120A4-BP high-performance 1,200 V SiC N-channel MOSFET features an impressively low on-resistance of 28 mΩ at a gate-source voltage of 18 V and is engineered to deliver in demanding high-power applications.
Housed in a TO-247-4 package, this MOSFET works well with the D2PAK 4-pin footprint and includes a Kelvin source pin for a significant reduction in switching losses and a boost in energy efficiency. A high operating junction temperature of up to +175°C and excellent thermal stability ensures the SiC MOSFET will provide power management in a diverse range of industrial and commercial devices that must perform in harsh conditions.
Features
- Blocking voltage capability: 1,200 V
- Low on-resistance: 28 mΩ
- Kelvin source pin for enhanced switching
- Avalanche ruggedness for durability
- Excellent thermal stability
- High operating junction temperature: +175°C
- Package: D2PAK-compatible 4-pin TO-247-4
Applications
- Industrial:
- Motor drives
- Power supplies
- Welding equipment
- High-voltage DC/DC converters
- Battery chargers
- Renewable energy:
- Solar inverters
- Energy storage systems (ESS)
- Computing:
- High-efficiency power supplies for datacenters
- Uninterruptible power supply (UPS) systems
Published: 2024-04-30
