650 V XPT™ Gen5 A5/B5/C5 Discrete IGBT

Littelfuse's 650 V XPT Gen5 class A IGBTs are low-speed devices optimized for applications requiring a switching frequency in the range of 0 up to 5 kHz. These IGBTs are optimized to have high surge current capability and low gate charge Q_g, hence, low gate-drive requirements. Gen5 class A offers discrete devices with high power densities. DC collector currents of 220 A at T_C=+110°C can be achieved. The positive temperature coefficient of the on-state voltage, V_CE(SAT), helps to ease paralleling. The low thermal resistance simplifies the thermal-related design issues.

The 650 V XPT Gen5 class B IGBTs are medium-speed devices optimized for applications requiring a switching frequency in the range of 5 kHz to 30 kHz. These IGBTs are optimized to have high surge current capability and low gate charge Q_g, hence, low gate-drive requirements. Gen5 class B offers discrete devices with high power densities. DC collector currents of 200 A at TC=+110°C can be achieved. The positive temperature coefficient of the on-state voltage, V_CE(SAT), helps to ease paralleling. The low thermal resistance simplifies the thermal-related design issues.

The 650 V XPT Gen5 class C IGBTs are high-speed devices optimized for applications requiring a switching frequency in the range of 20 kHz to 60 kHz. These IGBTs are optimized to have high surge current capability and low gate charge Q_g, hence, low gate-drive requirements. Gen5 class C offers discrete devices with high power densities. DC collector currents of 100 A at TC=+110°C can be achieved. The positive temperature coefficient of the on-state voltage, V_CE(SAT), helps to ease paralleling. The low thermal resistance simplifies the thermal-related design issues.