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IRFB4020PBF N-Channel 200V 18A (Tc) 100W (Tc) Through Hole TO-220AB
Price & Procurement
5 630 In Stock
Can ship immediately
 

Quantity
All prices are in PLN.
Price Break Unit Price Extended Price
1 6,59000 6,59 zł
10 5,88600 58,86 zł
25 5,58640 139,66 zł
100 4,18950 418,95 zł
250 4,14956 1 037,39 zł
500 3,55100 1 775,50 zł
1 000 2,89268 2 892,68 zł
2 500 2,85279 7 131,97 zł
5 000 2,59344 12 967,19 zł

Submit a request for quotation on quantities greater than those displayed.

IRFB4020PBF

Datasheet
Digi-Key Part Number IRFB4020PBF-ND
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Manufacturer

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Manufacturer Part Number IRFB4020PBF
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Description MOSFET N-CH 200V 18A TO-220AB
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Manufacturer Standard Lead Time 15 Weeks
Detailed Description

N-Channel 200V 18A (Tc) 100W (Tc) Through Hole TO-220AB

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Documents & Media
Datasheets IRFB4020PBF
Other Related Documents IR Part Numbering System
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product Data Processing Systems
PCN Design/Specification Mult Dev No Format/Barcode Label 15/Jan/2019
PCN Packaging Mult Device Standard Label Chg 29/Sep/2017
Tube Label Chgs 20/May/2020
HTML Datasheet IRFB4020PBF
Simulation Models IRFB4020PBF Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 50V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names SP001564028