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EPC2022 N-Channel 100V 60A (Ta) Surface Mount Die
Price & Procurement
5 619 In Stock
Can ship immediately
 

Quantity
All prices are in PLN.
Price Break Unit Price Extended Price
1 30,57000 30,57 zł
10 27,61400 276,14 zł
25 26,32920 658,23 zł
100 21,83410 2 183,41 zł
250 20,54976 5 137,44 zł
500 19,26540 9 632,70 zł

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : 917-1133-2-ND
  • Minimum Quantity: 1 000
  • Quantity Available: 5 000 - Immediate
  • Unit Price: 17,33886 zł
  • Digi-Reel®  : 917-1133-6-ND
  • Minimum Quantity: 1
  • Quantity Available: 5 619 - Immediate
  • Unit Price: Digi-Reel®

EPC2022

Datasheet
Digi-Key Part Number 917-1133-1-ND
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Manufacturer

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Manufacturer Part Number EPC2022
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Description GAN TRANS 100V 3MOHM BUMPED DIE
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 100V 60A (Ta) Surface Mount Die

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Documents & Media
Datasheets EPC2022
Video File Texas Instruments/Wurth/EPC GaN Solutions First Look Video
Featured Product High Power eGaN® FETs
Reference Design Library EPC9080: 30A, 0 ~ 100V, Half H-Bridge
PCN Assembly/Origin Site Change 13/Mar/2017
Product Attributes
Type Description Select All
Categories
Manufacturer EPC
Series eGaN®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 12mA
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 50V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
For Use With

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Additional Resources
Standard Package 1
Other Names 917-1133-1