Single IGBTs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DGTD65T15H2TF
DGTD65T15H2TF
IGBT FIELD STP 650V 30A ITO220AB
Diodes Incorporated
230
In Stock
1 : 11,60000 zł
Tube
-
Tube
Active
Field Stop
650 V
30 A
60 A
2V @ 15V, 15A
48 W
270µJ (on), 86µJ (off)
Standard
61 nC
19ns/128ns
400V, 15A, 10Ohm, 15V
150 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
TO-247-3
DGTD120T25S1PT
IGBT FIELD STOP 1200V 50A TO-247
Diodes Incorporated
447
In Stock
1 : 29,59000 zł
Tube
-
Tube
Active
Field Stop
1200 V
50 A
100 A
2.4V @ 15V, 25A
348 W
1.44mJ (on), 550µJ (off)
Standard
204 nC
73ns/269ns
600V, 25A, 23Ohm, 15V
100 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
TO-247-3
DGTD120T40S1PT
IGBT FIELD STOP 1200V 80A TO-247
Diodes Incorporated
0
In Stock
Obsolete
-
Tube
Obsolete
Field Stop
1200 V
80 A
160 A
2.4V @ 15V, 40A
357 W
1.96mJ (on), 540µJ (off)
Standard
341 nC
65ns/308ns
600V, 40A, 10Ohm, 15V
100 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
TO-247-3
DGTD65T40S1PT
IGBT FIELD STOP 650V 80A TO-247
Diodes Incorporated
0
In Stock
Active
-
Tube
Active
Field Stop
650 V
80 A
160 A
2.4V @ 15V, 40A
341 W
1.15mJ (on), 350µJ (off)
Standard
219 nC
58ns/245ns
400V, 40A, 7.9Ohm, 15V
145 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
TO-247-3
DGTD65T40S2PT
IGBT FIELD STOP 650V 80A TO-247
Diodes Incorporated
0
In Stock
Obsolete
-
Tube
Obsolete
Field Stop
650 V
80 A
120 A
2.3V @ 15V, 40A
230 W
500µJ (on), 400µJ (off)
Standard
60 nC
6ns/55ns
400V, 40A, 10Ohm, 15V
60 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
TO-247-3
DGTD65T50S1PT
IGBT FIELD STOP 650V 100A TO-247
Diodes Incorporated
0
In Stock
Obsolete
-
Tube
Obsolete
Field Stop
650 V
100 A
200 A
2.4V @ 15V, 50A
375 W
770µJ (on), 550µJ (off)
Standard
287 nC
58ns/328ns
400V, 50A, 7.9Ohm, 15V
80 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
TO-247-3
DGTD65T60S2PT
IGBT FIELD STOP 650V 100A TO-247
Diodes Incorporated
0
In Stock
Obsolete
-
Tube
Obsolete
Field Stop
650 V
100 A
180 A
2.4V @ 15V, 60A
428 W
920µJ (on), 530µJ (off)
Standard
95 nC
42ns/142ns
400V, 60A, 7Ohm, 15V
205 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
Showing
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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.